High-k gate dielectrics for CMOS technology (Record no. 75743)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 01518nam a2200325 a 4500 |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 538.24 |
| 245 00 - TITLE STATEMENT | |
| Title | High-k gate dielectrics for CMOS technology |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) | |
| Place of publication | Weinheim : |
| Name of publisher | Wiley-VCH, |
| Year of publication | 2012. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Number of Pages | xxxi, 558 p. : |
| Other physical details | ill. (some col.) |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical Term | Dielectrics. |
| Topical Term | Metal oxide semiconductors, Complementary. |
| 700 1# - ADDED ENTRY--PERSONAL NAME | |
| Personal name | He, Gang. |
| Personal name | Sun, Zhaoqi. |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | http://site.ebrary.com/lib/rucke/Doc?id=10653595 |
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