01621nam a2200361Ia 4500001001200000003000800012006001900020007001500039008004100054010001700095020001800112020001500130020001800145040002100163035002100184050002800205082002700233100003600260245016100296260006100457300002600518490007900544504005100623533015200674650005600826650007700882655002900959700002800988700002001016710001701036830008001053856012601133ebr10686047CaPaEBRm        u        cr cn|||||||||070216s2008    si a    sb    001 0 eng d  z  2008276858  z9789812568649  z9812568646  z9789812812056  aCaPaEBRcCaPaEBR  a(OCoLC)55176289614aTK7871.95b.M585 2008eb04a621.3815/2840151182221 aMiura-Mattausch, Mitiko,d1949-14aThe physics and modeling of MOSFETSh[electronic resource] :bsurface-potential model HiSIM /cMitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki.  aSingapore ;aHackensack, NJ :bWorld Scientific,cc2008.  axxii, 352 p. :bill. 1 aInternational series on advances in solid state electronics and technology  aIncludes bibliographical references and index.  aElectronic reproduction.bPalo Alto, Calif. :cebrary,d2013.nAvailable via World Wide Web.nAccess may be limited to ebrary affiliated libraries. 0aMetal oxide semiconductor field-effect transistors. 0aMetal oxide semiconductor field-effect transistorsxMathematical models. 7aElectronic books.2local1 aMattausch, Hans Jurgen.1 aEzaki, Tatsuya.2 aebrary, Inc. 0aInternational series on advances in solid state electronics and technology.40uhttp://site.ebrary.com/lib/rucke/Doc?id=10686047zAn electronic book accessible through the World Wide Web; click to view