01508nam a2200337Ia 4500001001200000003000800012006001900020007001500039008004100054020001500095040002100110035002100131050002700152100005300179245009400232260005400326300002500380490005600405500010100461504005100562533015200613650002600765650004400791655002900835700002200864710001700886740006500903830005700968856012601025999001901151ebr10174109CaPaEBRm        u        cr cn|||||||||060207s2005    njua    sb    001 0 eng d  z9812565213  aCaPaEBRcCaPaEBR  a(OCoLC)61499149914aQC611.6.R3bK69 2005eb1 aKozlovski�i, V. V.q(Vitali�i Vasil�evich)10aRadiation defect engineeringh[electronic resource] /cKozlovski Vitali, Abrosimova Vera.  aNew Jersey ;aLondon :bWorld Scientific,cc2005.  aviii, 253 p. :bill.1 aSelected topics in electronics and systems ;vv. 37  aReprinted from: International journal of high speed electronics and systems, v. 15, no. 1, 2005.  aIncludes bibliographical references and index.  aElectronic reproduction.bPalo Alto, Calif. :cebrary,d2009.nAvailable via World Wide Web.nAccess may be limited to ebrary affiliated libraries. 0aSemiconductor doping. 0aSemiconductorsxEffect of radiation on. 7aElectronic books.2local1 aAbrosimova, Vera.2 aebrary, Inc.02aInternational journal of high speed electronics and systems. 0aSelected topics in electronics and systems ;vv. 37.40uhttp://site.ebrary.com/lib/rucke/Doc?id=10174109zAn electronic book accessible through the World Wide Web; click to view  c138340d138340