01245nam a2200301Ia 4500001001200000003000800012006001900020007001500039008004100054010001700095020002600112040002100138035002100159050003000180100001900210245011500229260004700344300002500391504005100416533015200467650005600619650006000675655002900735700001900764710001700783856012600800999001700926ebr10325826CaPaEBRm        u        cr cn|||||||||081027s2009    si a    sb    001 0 eng d  z  2008045600  z9780470824078 (cloth)  aCaPaEBRcCaPaEBR  a(OCoLC)66900825914aTK7871.99.M44bK47 2009eb1 aKer, Ming-Dou.10aTransient-induced latchup in CMOS integrated circuitsh[electronic resource] /cMing-Dou Ker and Sheng-Fu Hsu.  aSingapore ;aHoboken, NJ :bWiley,cc2009.  axiii, 249 p. :bill.  aIncludes bibliographical references and index.  aElectronic reproduction.bPalo Alto, Calif. :cebrary,d2009.nAvailable via World Wide Web.nAccess may be limited to ebrary affiliated libraries. 0aMetal oxide semiconductors, ComplementaryxDefects. 0aMetal oxide semiconductors, ComplementaryxReliability. 7aElectronic books.2local1 aHsu, Sheng-Fu.2 aebrary, Inc.40uhttp://site.ebrary.com/lib/rucke/Doc?id=10325826zAn electronic book accessible through the World Wide Web; click to view  c54156d54156