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  <titleInfo>
    <title>Silicon technologies</title>
    <subTitle>ion implantation and thermal treatment</subTitle>
  </titleInfo>
  <name type="personal">
    <namePart>Baudrant, Annie.</namePart>
  </name>
  <name type="corporate">
    <namePart>ebrary, Inc</namePart>
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  <typeOfResource>text</typeOfResource>
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  <genre authority="local">Electronic books.</genre>
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    <place>
      <placeTerm type="text">London</placeTerm>
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    <place>
      <placeTerm type="text">Hoboken, N.J</placeTerm>
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    <publisher>ISTE</publisher>
    <publisher>Wiley</publisher>
    <dateIssued>2011</dateIssued>
    <issuance>monographic</issuance>
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    <form authority="marcform">electronic</form>
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    <extent>xvii, 337 p. : ill.</extent>
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  <abstract>The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.</abstract>
  <note type="statement of responsibility">edited by Annie Baudrant.</note>
  <note>Includes bibliographical references and index.</note>
  <note>Electronic reproduction. Palo Alto, Calif. : ebrary, 2015. Available via World Wide Web. Access may be limited to ebrary affiliated libraries.</note>
  <subject authority="lcsh">
    <topic>Semiconductor doping</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Ion implantation</topic>
  </subject>
  <subject authority="lcsh">
    <topic>Semiconductors</topic>
    <topic>Heat treatment</topic>
  </subject>
  <classification authority="lcc">TK7871.85 .S5485 2011eb</classification>
  <classification authority="ddc" edition="22">621.3815/2</classification>
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