01530nam a2200349 a 4500001001200000003000800012006001900020007001500039008004100054010001700095020002300112020001500135020002700150040002100177035002100198050002900219082001900248245011900267260005300386300002500439504005100464520021900515533015200734650002600886650002200912650003600934655002900970700002100999710001701020856012601037999001701163ebr10660607CaPaEBRm     o  u        cr cn|||||||||110316s2011    enka    sb    001 0 eng d  z  2011008131  z9781848212312 (hc)  z1848212313  z9781118601112 (e-book)  aCaPaEBRcCaPaEBR  a(OCoLC)82867218514aTK7871.85b.S5485 2011eb04a621.3815/222200aSilicon technologiesh[electronic resource] :bion implantation and thermal treatment /cedited by Annie Baudrant.  aLondon :bISTE ;aHoboken, N.J. :bWiley,c2011.  axvii, 337 p. :bill.  aIncludes bibliographical references and index.  aThe main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.  aElectronic reproduction.bPalo Alto, Calif. :cebrary,d2015.nAvailable via World Wide Web.nAccess may be limited to ebrary affiliated libraries. 0aSemiconductor doping. 0aIon implantation. 0aSemiconductorsxHeat treatment. 7aElectronic books.2local1 aBaudrant, Annie.2 aebrary, Inc.40uhttp://site.ebrary.com/lib/rucke/Doc?id=10660607zAn electronic book accessible through the World Wide Web; click to view  c67883d67883