01518nam a2200325 a 4500001001200000003000800012006001900020007001500039008004100054020001800095020002700113040002100140035002100161050002300182082001500205245010800220260003400328300003700362504005100399505030600450533015200756650001700908650004700925655002900972700001401001700001701015710001701032856012601049999001701175ebr10653595CaPaEBRm        u        cr cn|||||||||130212s2012    gw a    sb    001 0 eng d  z9783527330324  z9783527646371 (e-book)  aCaPaEBRcCaPaEBR  a(OCoLC)79853632514aQC585b.H54 2012eb04a538.2422300aHigh-k gate dielectrics for CMOS technologyh[electronic resource] /cedited by Gang He and Zhaoqi Sun.  aWeinheim :bWiley-VCH,c2012.  axxxi, 558 p. :bill. (some col.)  aIncludes bibliographical references and index.0 apt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions.  aElectronic reproduction.bPalo Alto, Calif. :cebrary,d2013.nAvailable via World Wide Web.nAccess may be limited to ebrary affiliated libraries. 0aDielectrics. 0aMetal oxide semiconductors, Complementary. 7aElectronic books.2local1 aHe, Gang.1 aSun, Zhaoqi.2 aebrary, Inc.40uhttp://site.ebrary.com/lib/rucke/Doc?id=10653595zAn electronic book accessible through the World Wide Web; click to view  c75743d75743