05495nam a2200397 a 4500001001200000003000800012006001900020007001500039008004100054010001700095020001500112020001800127020002700145040002100172035002100193050002700214082001700241111012200258245033200380246010000712246008100812260008300893300002300976440005200999504005301051505350601104533015204610650003304762650004204795650004404837655002904881700002304910700002104933710001704954856012604971ebr10604254CaPaEBRm        u        cr cn|||||||||110630s2011    sz a    sb    101 0 eng d  z  2011377587  z3037850515  z9783037850510  z9783038134947 (e-book)  aCaPaEBRcCaPaEBR  a(OCoLC)81547931414aTK7874.84b.I58 2011eb04a621.38152232 aInternational Symposium on Technology Evolution for Silicon Nano-Electronicsd(2010 :cTokyo Institute of Technology)10aTechnology evolution for silicon nano-electronicsh[electronic resource] :bselected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan /cedited by Seiichi Miyazaki and Hitoshi Tabata.30aProceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics30aInternational Symposium on Technology Evolution for Silicon Nano-Electronics  aStafa-Zurich, Switzerland ;aEnfield, N.H. :bTrans Tech Publications,cc2011.  axi, 234 p. :bill. 0aKey engineering materials,x1013-9826 ;vv. 470  aIncludes bibliographical references and indexes.0 aHigh Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory -- Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors -- Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator  -- Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering -- Resistive Memory Utilizing Ferritin Protein with Nano Particle -- Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation -- Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction -- Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface -- Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process -- Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation -- Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction -- Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures -- Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application -- Strained Ge and Ge1-xSnx Technology for Future CMOS Devices -- Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100) -- Structural Change during the Formation of Directly Bonded Silicon Substrates -- Microscopic Structure of Directly Bonded Silicon Substrates -- Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains -- Si Nanodot Device Fabricated by Thermal Oxidation and their Applications -- Influences of Carrier Transport on Drain-Current Variability of MOSFETs -- Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers -- Analysis of Threshold Voltage Variations in Fin Field Effect Transistors -- Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs -- Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction -- Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs -- Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors -- Interconnect Design Challenges in Nano CMOS Circuit.  aElectronic reproduction.bPalo Alto, Calif. :cebrary,d2011.nAvailable via World Wide Web.nAccess may be limited to ebrary affiliated libraries. 0aNanoelectronicsvCongresses. 0aNanostructured materialsvCongresses. 0aMetal oxide semiconductorsvCongresses. 7aElectronic books.2local1 aMiyazaki, Seiichi.1 aTabata, Hitoshi.2 aebrary, Inc.40uhttp://site.ebrary.com/lib/rucke/Doc?id=10604254zAn electronic book accessible through the World Wide Web; click to view