000			01481nam a2200325Ia 4500
001			ebr10188796
003			CaPaEBR
006			m u
007			cr cn|||||||||
008			070607s2007 si a sb 001 0 eng d
020			_z9812568107
020			_z9789812568106
040			_aCaPaEBR _cCaPaEBR
035			_a(OCoLC)648317008
050	1	4	_aTK7871.99.M44 _bG35 2007eb
100	1		_aGalup-Montoro, Carlos.
245	1	0	_aMOSFET modeling for circuit analysis and design _h[electronic resource] / _cCarlos Galup-Montoro, M�arcio Cherem Schneider.
260			_aSingapore ; _aHackensack, NJ : _bWorld Scientific, _cc2007.
300			_axxiv, 418 p. : _bill.
490	1		_aInternational series on advances in solid state electronics and technology
504			_aIncludes bibliographical references and index.
533			_aElectronic reproduction. _bPalo Alto, Calif. : _cebrary, _d2009. _nAvailable via World Wide Web. _nAccess may be limited to ebrary affiliated libraries.
650		0	_aMetal oxide semiconductor field-effect transistors _xMathematical models.
650		0	_aField-effect transistors _xMathematical models.
655		7	_aElectronic books. _2local
700	1		_aSchneider, M�arcio Cherem.
710	2		_aebrary, Inc.
830		0	_aInternational series on advances in solid state electronics and technology.
856	4	0	_uhttp://site.ebrary.com/lib/rucke/Doc?id=10188796 _zAn electronic book accessible through the World Wide Web; click to view
999			_c236037 _d236037