000			01508nam a2200337Ia 4500
001			ebr10174109
003			CaPaEBR
006			m u
007			cr cn|||||||||
008			060207s2005 njua sb 001 0 eng d
020			_z9812565213
040			_aCaPaEBR _cCaPaEBR
035			_a(OCoLC)614991499
050	1	4	_aQC611.6.R3 _bK69 2005eb
100	1		_aKozlovski�i, V. V. _q(Vitali�i Vasil�evich)
245	1	0	_aRadiation defect engineering _h[electronic resource] / _cKozlovski Vitali, Abrosimova Vera.
260			_aNew Jersey ; _aLondon : _bWorld Scientific, _cc2005.
300			_aviii, 253 p. : _bill.
490	1		_aSelected topics in electronics and systems ; _vv. 37
500			_aReprinted from: International journal of high speed electronics and systems, v. 15, no. 1, 2005.
504			_aIncludes bibliographical references and index.
533			_aElectronic reproduction. _bPalo Alto, Calif. : _cebrary, _d2009. _nAvailable via World Wide Web. _nAccess may be limited to ebrary affiliated libraries.
650		0	_aSemiconductor doping.
650		0	_aSemiconductors _xEffect of radiation on.
655		7	_aElectronic books. _2local
700	1		_aAbrosimova, Vera.
710	2		_aebrary, Inc.
740	0	2	_aInternational journal of high speed electronics and systems.
830		0	_aSelected topics in electronics and systems ; _vv. 37.
856	4	0	_uhttp://site.ebrary.com/lib/rucke/Doc?id=10174109 _zAn electronic book accessible through the World Wide Web; click to view
999			_c248596 _d248596