000			01650nam a2200373Ia 4500
001			ebr10686047
003			CaPaEBR
006			m u
007			cr cn|||||||||
008			070216s2008 si a sb 001 0 eng d
010			_z 2008276858
020			_z9789812568649
020			_z9812568646
020			_z9789812812056
040			_aCaPaEBR _cCaPaEBR
035			_a(OCoLC)551762896
050	1	4	_aTK7871.95 _b.M585 2008eb
082	0	4	_a621.3815/284015118 _222
100	1		_aMiura-Mattausch, Mitiko, _d1949-
245	1	4	_aThe physics and modeling of MOSFETS _h[electronic resource] : _bsurface-potential model HiSIM / _cMitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki.
260			_aSingapore ; _aHackensack, NJ : _bWorld Scientific, _cc2008.
300			_axxii, 352 p. : _bill.
490	1		_aInternational series on advances in solid state electronics and technology
504			_aIncludes bibliographical references and index.
533			_aElectronic reproduction. _bPalo Alto, Calif. : _cebrary, _d2013. _nAvailable via World Wide Web. _nAccess may be limited to ebrary affiliated libraries.
650		0	_aMetal oxide semiconductor field-effect transistors.
650		0	_aMetal oxide semiconductor field-effect transistors _xMathematical models.
655		7	_aElectronic books. _2local
700	1		_aMattausch, Hans Jurgen.
700	1		_aEzaki, Tatsuya.
710	2		_aebrary, Inc.
830		0	_aInternational series on advances in solid state electronics and technology.
856	4	0	_uhttp://site.ebrary.com/lib/rucke/Doc?id=10686047 _zAn electronic book accessible through the World Wide Web; click to view
999			_c30516 _d30516