| 000 | 01245nam a2200301Ia 4500 | ||
|---|---|---|---|
| 001 | ebr10325826 | ||
| 003 | CaPaEBR | ||
| 006 | m u | ||
| 007 | cr cn||||||||| | ||
| 008 | 081027s2009 si a sb 001 0 eng d | ||
| 010 | _z 2008045600 | ||
| 020 | _z9780470824078 (cloth) | ||
| 040 |
_aCaPaEBR _cCaPaEBR |
||
| 035 | _a(OCoLC)669008259 | ||
| 050 | 1 | 4 |
_aTK7871.99.M44 _bK47 2009eb |
| 100 | 1 | _aKer, Ming-Dou. | |
| 245 | 1 | 0 |
_aTransient-induced latchup in CMOS integrated circuits _h[electronic resource] / _cMing-Dou Ker and Sheng-Fu Hsu. |
| 260 |
_aSingapore ; _aHoboken, NJ : _bWiley, _cc2009. |
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| 300 |
_axiii, 249 p. : _bill. |
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| 504 | _aIncludes bibliographical references and index. | ||
| 533 |
_aElectronic reproduction. _bPalo Alto, Calif. : _cebrary, _d2009. _nAvailable via World Wide Web. _nAccess may be limited to ebrary affiliated libraries. |
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| 650 | 0 |
_aMetal oxide semiconductors, Complementary _xDefects. |
|
| 650 | 0 |
_aMetal oxide semiconductors, Complementary _xReliability. |
|
| 655 | 7 |
_aElectronic books. _2local |
|
| 700 | 1 | _aHsu, Sheng-Fu. | |
| 710 | 2 | _aebrary, Inc. | |
| 856 | 4 | 0 |
_uhttp://site.ebrary.com/lib/rucke/Doc?id=10325826 _zAn electronic book accessible through the World Wide Web; click to view |
| 999 |
_c54156 _d54156 |
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