000			01530nam a2200349 a 4500
001			ebr10660607
003			CaPaEBR
006			m o u
007			cr cn|||||||||
008			110316s2011 enka sb 001 0 eng d
010			_z 2011008131
020			_z9781848212312 (hc)
020			_z1848212313
020			_z9781118601112 (e-book)
040			_aCaPaEBR _cCaPaEBR
035			_a(OCoLC)828672185
050	1	4	_aTK7871.85 _b.S5485 2011eb
082	0	4	_a621.3815/2 _222
245	0	0	_aSilicon technologies _h[electronic resource] : _bion implantation and thermal treatment / _cedited by Annie Baudrant.
260			_aLondon : _bISTE ; _aHoboken, N.J. : _bWiley, _c2011.
300			_axvii, 337 p. : _bill.
504			_aIncludes bibliographical references and index.
520			_aThe main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.
533			_aElectronic reproduction. _bPalo Alto, Calif. : _cebrary, _d2015. _nAvailable via World Wide Web. _nAccess may be limited to ebrary affiliated libraries.
650		0	_aSemiconductor doping.
650		0	_aIon implantation.
650		0	_aSemiconductors _xHeat treatment.
655		7	_aElectronic books. _2local
700	1		_aBaudrant, Annie.
710	2		_aebrary, Inc.
856	4	0	_uhttp://site.ebrary.com/lib/rucke/Doc?id=10660607 _zAn electronic book accessible through the World Wide Web; click to view
999			_c67883 _d67883