| 000 | 01518nam a2200325 a 4500 | ||
|---|---|---|---|
| 001 | ebr10653595 | ||
| 003 | CaPaEBR | ||
| 006 | m u | ||
| 007 | cr cn||||||||| | ||
| 008 | 130212s2012 gw a sb 001 0 eng d | ||
| 020 | _z9783527330324 | ||
| 020 | _z9783527646371 (e-book) | ||
| 040 |
_aCaPaEBR _cCaPaEBR |
||
| 035 | _a(OCoLC)798536325 | ||
| 050 | 1 | 4 |
_aQC585 _b.H54 2012eb |
| 082 | 0 | 4 |
_a538.24 _223 |
| 245 | 0 | 0 |
_aHigh-k gate dielectrics for CMOS technology _h[electronic resource] / _cedited by Gang He and Zhaoqi Sun. |
| 260 |
_aWeinheim : _bWiley-VCH, _c2012. |
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| 300 |
_axxxi, 558 p. : _bill. (some col.) |
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| 504 | _aIncludes bibliographical references and index. | ||
| 505 | 0 | _apt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions. | |
| 533 |
_aElectronic reproduction. _bPalo Alto, Calif. : _cebrary, _d2013. _nAvailable via World Wide Web. _nAccess may be limited to ebrary affiliated libraries. |
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| 650 | 0 | _aDielectrics. | |
| 650 | 0 | _aMetal oxide semiconductors, Complementary. | |
| 655 | 7 |
_aElectronic books. _2local |
|
| 700 | 1 | _aHe, Gang. | |
| 700 | 1 | _aSun, Zhaoqi. | |
| 710 | 2 | _aebrary, Inc. | |
| 856 | 4 | 0 |
_uhttp://site.ebrary.com/lib/rucke/Doc?id=10653595 _zAn electronic book accessible through the World Wide Web; click to view |
| 999 |
_c75743 _d75743 |
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