000 01197nam a2200301Ia 4500
001 ebr10126001
003 CaPaEBR
006 m u
007 cr cn|||||||||
008 050728s2005 si a sb 001 0 eng d
010 _z 2005296210
020 _z9812561218
040 _aCaPaEBR
_cCaPaEBR
035 _a(OCoLC)560092203
050 1 4 _aTK7871.95
_b.B35 2005eb
082 0 4 _a621.3815/284
_222
100 1 _aBaliga, B. Jayant,
_d1948-
245 1 0 _aSilicon RF power MOSFETS
_h[electronic resource] /
_cB. Jayant Baliga.
260 _aSingapore ;
_aHackensack, NJ :
_bWorld Scientific,
_cc2005.
300 _axvi, 302 p. :
_bill. (some col.)
504 _aIncludes bibliographical references and index.
533 _aElectronic reproduction.
_bPalo Alto, Calif. :
_cebrary,
_d2009.
_nAvailable via World Wide Web.
_nAccess may be limited to ebrary affiliated libraries.
650 0 _aMetal oxide semiconductor field-effect transistors.
650 0 _aField-effect transistors.
655 7 _aElectronic books.
_2local
710 2 _aebrary, Inc.
856 4 0 _uhttp://site.ebrary.com/lib/rucke/Doc?id=10126001
_zAn electronic book accessible through the World Wide Web; click to view
999 _c80992
_d80992