000			05524nam a2200409 a 4500
001			ebr10604254
003			CaPaEBR
006			m u
007			cr cn|||||||||
008			110630s2011 sz a sb 101 0 eng d
010			_z 2011377587
020			_z3037850515
020			_z9783037850510
020			_z9783038134947 (e-book)
040			_aCaPaEBR _cCaPaEBR
035			_a(OCoLC)815479314
050	1	4	_aTK7874.84 _b.I58 2011eb
082	0	4	_a621.3815 _223
111	2		_aInternational Symposium on Technology Evolution for Silicon Nano-Electronics _d(2010 : _cTokyo Institute of Technology)
245	1	0	_aTechnology evolution for silicon nano-electronics _h[electronic resource] : _bselected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan / _cedited by Seiichi Miyazaki and Hitoshi Tabata.
246	3	0	_aProceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics
246	3	0	_aInternational Symposium on Technology Evolution for Silicon Nano-Electronics
260			_aStafa-Zurich, Switzerland ; _aEnfield, N.H. : _bTrans Tech Publications, _cc2011.
300			_axi, 234 p. : _bill.
440		0	_aKey engineering materials, _x1013-9826 ; _vv. 470
504			_aIncludes bibliographical references and indexes.
505	0		_aHigh Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory -- Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors -- Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator -- Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering -- Resistive Memory Utilizing Ferritin Protein with Nano Particle -- Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation -- Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction -- Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface -- Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process -- Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation -- Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction -- Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures -- Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application -- Strained Ge and Ge1-xSnx Technology for Future CMOS Devices -- Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100) -- Structural Change during the Formation of Directly Bonded Silicon Substrates -- Microscopic Structure of Directly Bonded Silicon Substrates -- Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains -- Si Nanodot Device Fabricated by Thermal Oxidation and their Applications -- Influences of Carrier Transport on Drain-Current Variability of MOSFETs -- Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers -- Analysis of Threshold Voltage Variations in Fin Field Effect Transistors -- Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs -- Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction -- Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs -- Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors -- Interconnect Design Challenges in Nano CMOS Circuit.
533			_aElectronic reproduction. _bPalo Alto, Calif. : _cebrary, _d2011. _nAvailable via World Wide Web. _nAccess may be limited to ebrary affiliated libraries.
650		0	_aNanoelectronics _vCongresses.
650		0	_aNanostructured materials _vCongresses.
650		0	_aMetal oxide semiconductors _vCongresses.
655		7	_aElectronic books. _2local
700	1		_aMiyazaki, Seiichi.
700	1		_aTabata, Hitoshi.
710	2		_aebrary, Inc.
856	4	0	_uhttp://site.ebrary.com/lib/rucke/Doc?id=10604254 _zAn electronic book accessible through the World Wide Web; click to view
999			_c99893 _d99893